Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MITSUBISHI IGBT MODULES CM100TU-12F HIGH POWER SWITCHING USE CM100TU-12F ¡IC ....... 100A ¡VCES 600V ¡Insulated Type ¡6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM .
so — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 100 200 100 200 350
–40 ~ +150
–40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 Unit V V A A W °C °C V N
•m N
•m g
(Note 2) (Note 2)
Main terminal to base plate, AC 1 min. Main Terminal M4 Mounting holes M5 Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres .
CM100TU-12F - Powerex Power Semiconductors
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors i.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CM100TU-12H |
Mitsubishi Electric Semiconductor |
IGBT Module |
|
| 2 | CM100TU-12H |
Powerex Power Semiconductors |
IGBT Module |
|
| 3 | CM100TU-24F |
Mitsubishi Electric Semiconductor |
IGBT Module |
|
| 4 | CM100TU-24F |
Powerex Power Semiconductors |
IGBT Module |
|
| 5 | CM100TU-24H |
Mitsubishi Electric Semiconductor |
IGBT Module |
|
| 6 | CM100TU-24H |
Powerex Power Semiconductors |
IGBT Module |
|
| 7 | CM100TF-12H |
Mitsubishi Electric Semiconductor |
IGBT Module |
|
| 8 | CM100TF-12H |
Powerex Power Semiconductors |
IGBT Module |
|
| 9 | CM100TF-24H |
Mitsubishi Electric Semiconductor |
IGBT Module |
|
| 10 | CM100TF-24H |
Powerex Power Semiconductors |
IGBT Module |
|
| 11 | CM100TF-28H |
Mitsubishi Electric Semiconductor |
IGBT Module |
|
| 12 | CM100TF-28H |
Powerex Power Semiconductors |
IGBT Module |
|