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CM100TU-12F |
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| Part Number | CM100TU-12F |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI IGBT MODULES CM100TU-12F HIGH POWER SWITCHING USE CM100TU-12F ¡IC . 100A ¡VCES ........ |
| Features |
so — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 100 200 100 200 350 –40 ~ +150 –40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 Unit V V A A W °C °C V N •m N •m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M4 Mounting holes M5 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres ... |
| Document |
 CM100TU-12F Data Sheet
PDF 82.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CM100TU-12F |
Powerex Power Semiconductors |
IGBT Module |
|
| 2 | CM100TU-12H |
Mitsubishi Electric Semiconductor |
IGBT Module |
|
| 3 | CM100TU-12H |
Powerex Power Semiconductors |
IGBT Module |
|
| 4 | CM100TU-24F |
Mitsubishi Electric Semiconductor |
IGBT Module |
|
| 5 | CM100TU-24F |
Powerex Power Semiconductors |
IGBT Module |
|