Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT-Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly an.
□ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies P GuP EuP U GvP EvP V GwP EwP W GuN EuN N GvN EvN GwN EwN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.21 3.54± 0.01 4.02 3.15± 0.01 0.43 0.91 0.47 0.85 0.91 Millimeters 107.0 90.0± 0.25 102.0 80.0± 0.25 11.0 23.0 12.0 21.7 23.0 Dimensions K L M N P Q R S Inches 0.15 0.67 1.91 0.03 0.32 1.02 0.22 Dia. 0.57 Millimeters 3..
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three ph.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CM100TU-24F |
Mitsubishi Electric Semiconductor |
IGBT Module | |
2 | CM100TU-24F |
Powerex Power Semiconductors |
IGBT Module | |
3 | CM100TU-12F |
Mitsubishi Electric Semiconductor |
IGBT Module | |
4 | CM100TU-12F |
Powerex Power Semiconductors |
IGBT Module | |
5 | CM100TU-12H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
6 | CM100TU-12H |
Powerex Power Semiconductors |
IGBT Module | |
7 | CM100TF-12H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
8 | CM100TF-12H |
Powerex Power Semiconductors |
IGBT Module | |
9 | CM100TF-24H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
10 | CM100TF-24H |
Powerex Power Semiconductors |
IGBT Module | |
11 | CM100TF-28H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
12 | CM100TF-28H |
Powerex Power Semiconductors |
IGBT Module |