Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly an.
□ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking BuN EuN N BvN EvN BwN EwN N Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.21 4.02 3.543± 0.01 3.15± 0.01 1.57 1.38 1.28 1.26 Max. 1.18 0.98 0.96 0.79 0.67 Millimeters 107.0 102.0 90.0± 0.25 80.0± 0.25 40.0 35.0 32.5 32.0 Max 30.0 25.0 24.5 20.0 17.0 Dimensions P Q R S T U V W X Y Z AA Inches 0.57 0.55 0.47 0.43 0.39 0.33 0.30 0.24 Rad. 0.24 0.22 M5 Metric 0.08 Millimeters 14.5 14.0 12..
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three ph.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CM100TF-28H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
2 | CM100TF-28H |
Powerex Power Semiconductors |
IGBT Module | |
3 | CM100TF-12H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
4 | CM100TF-12H |
Powerex Power Semiconductors |
IGBT Module | |
5 | CM100TJ-12F |
Powerex Power Semiconductors |
IGBT Module | |
6 | CM100TJ-24F |
Powerex Power Semiconductors |
IGBT Module | |
7 | CM100TL-12NF |
Mitsubishi Electric |
IGBT Module | |
8 | CM100TL-24NF |
Mitsubishi Electric |
IGBT Module | |
9 | CM100TU-12F |
Mitsubishi Electric Semiconductor |
IGBT Module | |
10 | CM100TU-12F |
Powerex Power Semiconductors |
IGBT Module | |
11 | CM100TU-12H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
12 | CM100TU-12H |
Powerex Power Semiconductors |
IGBT Module |