: CL10B102KB8NNNC CAP, 1nF, 50V, ±10%, X7R, 0603 A. Samsung Part Number CL 10 B 102 K B 8 N N N C ① ②③ ④ ⑤ ⑥ ⑦ ⑧⑨⑩⑪ ① Series ② Size Samsung Multi-layer Ceramic Capacitor 0603 (inch code) L: 1.60 ± 0.10 ㎜ W: 0.80 ± 0.10 ㎜ ③ Dielectric ④ Capacitance ⑤ Capacitance tolerance ⑥ Rated Voltage ⑦ Thickness X7R 1 nF ±10 % 50 V 0.80 ± 0.10 ㎜ ⑧ Inner electro.
Judgement
Test condition
Within specified tolerance
1㎑ ±10% / 1.0±0.2Vrms
0.025 max.
*A capacitor prior to measuring the capacitance is heat treated at 150℃+0/-10℃ for 1 hour and maintained in ambient air for 24±2 hours.
10,000Mohm or 500Mohm×㎌
Rated Voltage
60~120 sec.
Whichever is smaller
No abnormal exterior appearance No dielectric breakdown or
Microscope (×10) 250% of the rated voltage
mechanical breakdown
X7R
(From-55℃ to 125℃, Capacitance change should be within ±15%)
No peeling shall be occur on the
500g
·f, for 10±1 sec.
terminal electrode Capacitance change : within.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CL10B104KA8NNNC |
Samsung |
Multilayer Ceramic Capacitor | |
2 | CL10B104KB8NNNC |
Samsung semiconductor |
Multi Layer Ceramic Capacitor | |
3 | CL10B224 |
Samsung |
Multilayer Ceramic Capacitor | |
4 | CL100 |
CDIL |
NPN Silicon Planar Transistors | |
5 | CL100505 |
Chilisin Electronics |
SMD Multilayer Ferrite Chip Inductors | |
6 | CL100505T |
Chilisin Electronics |
SMD Multilayer Ferrite Chip Inductors | |
7 | CL100A |
CDIL |
NPN SILICON PLANAR TRANSISTORS | |
8 | CL100B |
CDIL |
NPN SILICON PLANAR TRANSISTORS | |
9 | CL100S |
CDIL |
NPN / PNP Silicon Planar Transistors | |
10 | CL10A225KO8NNNC |
Samsung |
Multi-layer Ceramic Capacitor | |
11 | CL10F104ZA8ANNP |
Samsung Electronics |
(CL10xxxxx) Multilayer Ceramic Capacitor | |
12 | CL10F474ZB8NNNC |
Samsung Electronics |
Multi-layer Ceramic Capacitor |