SYMBOL VCER Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current-Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Total device dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range VCBO VEBO ICM PD PD Tj, Tstg VALUE 50 60 5 1 800 5.33 3 20 -55 to +175 UNITS V V V A mW mW /°C W mW.
kdown Voltage Collector Leakage Current Emitter Leakage Current DC Current Gain Base Emitter On Voltage Collector Emitter (Sat) Voltage CLASSIFICATION HFE BVCBO BVEBO ICBO IEBO hFE
* IC =100µA, IE =0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=4V, IE=0 IC=150mA,VCE=10V
MIN 50 60 5
TYP
MAX
UNIT V V V
50 1 40 300 0.9 0.6
nA µA V V
VBE(on)
* VCE=1V, IC=150mA, VCE(sat)
* IC=150mA,IB=15mA A 40-120 B 100-300
*Pulse Condition : PW <300us, Duty Cycle < 2%
Continental Device India Limited
Data Sheet
Page 1 of 3
CL 100, A, B CK 100, A, B TO-39 Metal Can Package TO-39 Metal Can Package
A B
D G
2 1 3
PIN .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CL100505 |
Chilisin Electronics |
SMD Multilayer Ferrite Chip Inductors | |
2 | CL100505T |
Chilisin Electronics |
SMD Multilayer Ferrite Chip Inductors | |
3 | CL100A |
CDIL |
NPN SILICON PLANAR TRANSISTORS | |
4 | CL100B |
CDIL |
NPN SILICON PLANAR TRANSISTORS | |
5 | CL100S |
CDIL |
NPN / PNP Silicon Planar Transistors | |
6 | CL10A225KO8NNNC |
Samsung |
Multi-layer Ceramic Capacitor | |
7 | CL10B102KB8NNNC |
Samsung semiconductor |
Multi-layer Ceramic Capacitor | |
8 | CL10B104KA8NNNC |
Samsung |
Multilayer Ceramic Capacitor | |
9 | CL10B104KB8NNNC |
Samsung semiconductor |
Multi Layer Ceramic Capacitor | |
10 | CL10B224 |
Samsung |
Multilayer Ceramic Capacitor | |
11 | CL10F104ZA8ANNP |
Samsung Electronics |
(CL10xxxxx) Multilayer Ceramic Capacitor | |
12 | CL10F474ZB8NNNC |
Samsung Electronics |
Multi-layer Ceramic Capacitor |