CL100B - CDIL

CL100B NPN SILICON PLANAR TRANSISTORS

SYMBOL VCER Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current-Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Total device dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range VCBO VEBO ICM PD PD Tj, Tstg VALUE 50 60 5 1 800 5.33 3 20 -55 to +175 UNITS V V V A mW mW /°C W mW.

Features

age Emitter Base Breakdown Voltage Collector Leakage Current Emitter Leakage Current DC Current Gain Base Emitter On Voltage Collector Emitter (Sat) Voltage CLASSIFICATION HFE BVCBO BVEBO ICBO IEBO hFE
* IC =100µA, IE =0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=4V, IE=0 IC=150mA,VCE=10V MIN 50 60 5 TYP MAX UNIT V V V 50 1 40 300 0.9 0.6 nA µA V V VBE(on)
* VCE=1V, IC=150mA, VCE(sat)
* IC=150mA,IB=15mA A 40-120 B 100-300
*Pulse Condition : PW <300us, Duty Cycle < 2% Continental Device India Limited Data Sheet Page 1 of 3 www.DataSheet4U.com CL 100, A, B CK 100, A, B TO-39 Metal Can Package T.