: CAP, 2.2㎌, 16V, ±10%, X5R, 0603 A. Samsung Part Number CL 10 A 225 K O 8 N N N C ① ②③ ④ ⑤⑥⑦⑧⑨⑩⑪ ① Series ② Size Samsung Multi-layer Ceramic Capacitor 0603 (inch code) L: 1.6 ± 0.1 mm W: 0.8 ± 0.1 mm ③ Dielectric ④ Capacitance ⑤ Capacitance tolerance ⑥ Rated Voltage ⑦ Thickness X5R 2.2 ㎌ ±10 % 16 V 0.8 ± 0.1 mm ⑧ Inner electrode Termination Plati.
0~120 sec. Whichever is Smaller No abnormal exterior appearance Microscope (×10) No dielectric breakdown or 250% of the rated voltage mechanical breakdown X5R (From -55℃ to 85℃, Capacitance change shoud be within ±15%) No peeling shall be occur on the 500g⋅F, for 10±1 sec. terminal electrode Capacitance change : within ±12.5% Bending to the limit (1mm) with 1.0mm/sec. More than 95% of terminal surface 1) Sn63Pb37 solder is to be soldered newly 235±5℃, 5±0.5sec. 2) SnAg3.0Cu0.5 solder 245±5℃, 3±0.3sec. (preheating : 80~120℃ for 10~30sec.) Capacitance change : within ±7.5% S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CL100 |
CDIL |
NPN Silicon Planar Transistors | |
2 | CL100505 |
Chilisin Electronics |
SMD Multilayer Ferrite Chip Inductors | |
3 | CL100505T |
Chilisin Electronics |
SMD Multilayer Ferrite Chip Inductors | |
4 | CL100A |
CDIL |
NPN SILICON PLANAR TRANSISTORS | |
5 | CL100B |
CDIL |
NPN SILICON PLANAR TRANSISTORS | |
6 | CL100S |
CDIL |
NPN / PNP Silicon Planar Transistors | |
7 | CL10B102KB8NNNC |
Samsung semiconductor |
Multi-layer Ceramic Capacitor | |
8 | CL10B104KA8NNNC |
Samsung |
Multilayer Ceramic Capacitor | |
9 | CL10B104KB8NNNC |
Samsung semiconductor |
Multi Layer Ceramic Capacitor | |
10 | CL10B224 |
Samsung |
Multilayer Ceramic Capacitor | |
11 | CL10F104ZA8ANNP |
Samsung Electronics |
(CL10xxxxx) Multilayer Ceramic Capacitor | |
12 | CL10F474ZB8NNNC |
Samsung Electronics |
Multi-layer Ceramic Capacitor |