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CFY25 |
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| Part Number | CFY25 |
| Manufacturer | Siemens Semiconductor Group |
| Description | GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precauti... |
| Features |
VDS = 3 V, VGS = 0 Pinch-off voltage ID = 1 mA, VDS = 3 V Gate leakage current ID = 15 mA, VDS = 3 V Transconductance ID = 15 mA, VDS = 3 V Noise figure IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Associated gain IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Symbol min. IDSS Vp IG gm F – – – Ga 9 8.5 8.5 9.5 9 9 – – – 1.6 1.9 2.2 1.7 2.0 2.3 15 – 0.3 – 30 Values typ. 30 – 1.0 0.1 40 max. 60 – 3.0 2 – mA V µA Unit mS dB Semiconductor Group 2 CFY 25 Total power dissipation Ptot = f (TS; TA*) * Package mounted on alumina Output characteristics ID = f... |
| Document |
 CFY25 Data Sheet
PDF 158.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CFY25 |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 2 | CFY25-17 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 3 | CFY25-20 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 4 | CFY25-20 |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 5 | CFY25-20P |
Infineon |
HiRel X-Band GaAs MOSFET |
|