CED61A3/CEU61A3 Jan. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 30V , 40A , RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package. D G S G D S D G CEU SERIES TO-252AA(D-PAK) CED SERIES TO-251(l-PAK) .
6 30V , 40A , RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package. D G S G D S D G CEU SERIES TO-252AA(D-PAK) CED SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU61A2 |
CET |
N-Channel MOSFET | |
2 | CEU6186 |
CET |
N-Channel MOSFET | |
3 | CEU6030L |
CET |
N-Channel MOSFET | |
4 | CEU6031L |
CET |
N-Channel MOSFET | |
5 | CEU603AL |
Chino-Excel Technology |
N-Channel MOSFET | |
6 | CEU6042 |
CET |
N-Channel MOSFET | |
7 | CEU6056 |
CET |
N-Channel MOSFET | |
8 | CEU6056G |
CET |
N-Channel MOSFET | |
9 | CEU6060N |
CET |
N-Channel MOSFET | |
10 | CEU6060R |
CET |
N-Channel MOSFET | |
11 | CEU6086 |
CET |
N-Channel MOSFET | |
12 | CEU6086L |
CET |
N-Channel MOSFET |