CEU6086L - CET

CEU6086L N-Channel MOSFET

CED6086L/CEU6086L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 50.5A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G S CEU SERIES TO-252(D-PAK) G DS CED .

Features

60V, 50.5A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed.