CED6056/CEU6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 76A , RDS(ON) = 6.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MA.
60V, 76A , RDS(ON) = 6.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 76 IDM 304 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 70 0.47 Single Pulsed Avalanche Energy d Single Pulsed Av.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU6056G |
CET |
N-Channel MOSFET | |
2 | CEU6030L |
CET |
N-Channel MOSFET | |
3 | CEU6031L |
CET |
N-Channel MOSFET | |
4 | CEU603AL |
Chino-Excel Technology |
N-Channel MOSFET | |
5 | CEU6042 |
CET |
N-Channel MOSFET | |
6 | CEU6060N |
CET |
N-Channel MOSFET | |
7 | CEU6060R |
CET |
N-Channel MOSFET | |
8 | CEU6086 |
CET |
N-Channel MOSFET | |
9 | CEU6086L |
CET |
N-Channel MOSFET | |
10 | CEU6186 |
CET |
N-Channel MOSFET | |
11 | CEU61A2 |
CET |
N-Channel MOSFET | |
12 | CEU61A3 |
Chino-Excel Technology |
N-Channel MOSFET |