CEU61A2 - CET

CEU61A2 N-Channel MOSFET

CED61A2/CEU61A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 45A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D PRELIMINARY D G S CEU SERIES TO-252(D-PAK) G D G S CED SERI.

Features

20V, 45A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D PRELIMINARY D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 45 140 48 0.38 -55 to 150 Maximum Power Dissipation @ TC = 25 C -.