CED02N65D/CEU02N65D N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G .
650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 650 ±30 1.8 7.2 35 0.29 Operating and Store Temperature Range TJ,Tstg -55 to .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU02N65A |
CET |
N-Channel MOSFET | |
2 | CEU02N65G |
CET |
N-Channel MOSFET | |
3 | CEU02N6 |
CET |
N-Channel MOSFET | |
4 | CEU02N6A |
CET |
N-Channel MOSFET | |
5 | CEU02N6G |
Chino-Excel Technology |
N-Channel MOSFET | |
6 | CEU02N7 |
CET |
N-Channel MOSFET | |
7 | CEU02N7G |
Chino-Excel Technology |
N-Channel MOSFET | |
8 | CEU02N7G-1 |
CET |
N-Channel MOSFET | |
9 | CEU02N9 |
CET |
N-Channel MOSFET | |
10 | CEU01N6 |
CET |
N-Channel MOSFET | |
11 | CEU01N65 |
Chino-Excel Technology |
N-Channel MOSFET | |
12 | CEU01N65A |
Chino-Excel Technology |
N-Channel MOSFET |