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CEU02N65D |
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| Part Number | CEU02N65D |
| Manufacturer | CET |
| Description | CED02N65D/CEU02N65D N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High powe... |
| Features |
650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
650
±30
1.8 7.2 35 0.29
Operating and Store Temperature Range
TJ,Tstg
-55 to ... |
| Document |
 CEU02N65D Data Sheet
PDF 360.53KB |
| Distributor | Stock | Price | Buy |
|---|
