CEPF630/CEBF630 CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF630 CEBF630 CEFF630 VDSS 200V 200V 200V RDS(ON) 0.35Ω 0.35Ω 0.35Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(D.
Type CEPF630 CEBF630 CEFF630 VDSS 200V 200V 200V RDS(ON) 0.35Ω 0.35Ω 0.35Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEPF630B |
CET |
N-Channel MOSFET | |
2 | CEPF634 |
CET |
N-Channel MOSFET | |
3 | CEPF640 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
4 | CEPFZ44 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
5 | CEP01N6 |
CET |
N-Channel MOSFET | |
6 | CEP01N65 |
CET |
N-Channel MOSFET | |
7 | CEP01N6G |
CET |
N-Channel MOSFET | |
8 | CEP02N6 |
Chino-Excel Technology |
N-channel Enhancement Mode Field Effect Transistor | |
9 | CEP02N65A |
CET |
N-Channel Enhancement Mode Field Effect Transistor | |
10 | CEP02N65D |
CET |
N-Channel MOSFET | |
11 | CEP02N65G |
CET |
N-Channel Enhancement Mode Field Effect Transistor | |
12 | CEP02N6A |
CET |
N-Channel MOSFET |