CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is ac.
Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP02N6 |
Chino-Excel Technology |
N-channel Enhancement Mode Field Effect Transistor | |
2 | CEP02N65A |
CET |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | CEP02N65D |
CET |
N-Channel MOSFET | |
4 | CEP02N65G |
CET |
N-Channel Enhancement Mode Field Effect Transistor | |
5 | CEP02N6G |
CET |
N-Channel MOSFET | |
6 | CEP02N7 |
CET |
N-Channel MOSFET | |
7 | CEP02N7G |
CET |
N-Channel MOSFET | |
8 | CEP02N9 |
CET |
N-Channel MOSFET | |
9 | CEP01N6 |
CET |
N-Channel MOSFET | |
10 | CEP01N65 |
CET |
N-Channel MOSFET | |
11 | CEP01N6G |
CET |
N-Channel MOSFET | |
12 | CEP03N8 |
CET |
N-Channel MOSFET |