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CEPF630 |
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| Part Number | CEPF630 |
| Manufacturer | Chino-Excel Technology |
| Description | CEPF630/CEBF630 CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF630 CEBF630 CEFF630 VDSS 200V 200V 200V RDS(ON) 0.35Ω 0.35Ω 0.35Ω ID 10A 10A 10A d @VGS 10V 10V 10V ... |
| Features |
Type CEPF630 CEBF630 CEFF630
VDSS 200V 200V
200V
RDS(ON) 0.35Ω 0.35Ω
0.35Ω
ID 10A 10A 10A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS I... |
| Document |
 CEPF630 Data Sheet
PDF 375.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CEPF630B |
CET |
N-Channel MOSFET |
|
| 2 | CEPF634 |
CET |
N-Channel MOSFET |
|
| 3 | CEPF640 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 4 | CEPFZ44 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 5 | CEP01N6 |
CET |
N-Channel MOSFET |
|