CEPF640 - Chino-Excel Technology

CEPF640 N-Channel Enhancement Mode Field Effect Transistor

CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF640 CEBF640 CEFF640 VDSS 200V 200V 200V RDS(ON) 0.15Ω 0.15Ω 0.15Ω ID 19A 19A 19A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full.

Features

Type CEPF640 CEBF640 CEFF640 VDSS 200V 200V 200V RDS(ON) 0.15Ω 0.15Ω 0.15Ω ID 19A 19A 19A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power .