CEP13N5A/CEB13N5A CEF13N5A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP13N5A CEB13N5A CEF13N5A VDSS 500V 500V 500V RDS(ON) 0.48Ω 0.48Ω 0.48Ω ID 13A 13A 13A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SER.
Type CEP13N5A CEB13N5A CEF13N5A VDSS 500V 500V 500V RDS(ON) 0.48Ω 0.48Ω 0.48Ω ID 13A 13A 13A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP13N5 |
CET |
N-Channel MOSFET | |
2 | CEP13N07 |
CET |
N-Channel MOSFET | |
3 | CEP13N10 |
CET |
N-Channel MOSFET | |
4 | CEP13N10L |
CET |
N-Channel MOSFET | |
5 | CEP1311C |
Sumida |
ADSL Transformer | |
6 | CEP1311E |
Sumida |
ADSL Transformer | |
7 | CEP1012 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
8 | CEP1012L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
9 | CEP10N4 |
CET |
N-Channel MOSFET | |
10 | CEP10N6 |
CET |
N-Channel MOSFET | |
11 | CEP110P03 |
CET |
P-Channel MOSFET | |
12 | CEP1110 |
Sumida |
Pulse transformer |