CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP10N6 CEB10N6 CEF10N6 VDSS 600V 600V 600V RDS(ON) 0.75Ω 0.75Ω 0.75Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(.
Type CEP10N6 CEB10N6 CEF10N6 VDSS 600V 600V 600V RDS(ON) 0.75Ω 0.75Ω 0.75Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - De.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP10N4 |
CET |
N-Channel MOSFET | |
2 | CEP1012 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
3 | CEP1012L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
4 | CEP110P03 |
CET |
P-Channel MOSFET | |
5 | CEP1110 |
Sumida |
Pulse transformer | |
6 | CEP1112 |
Sumida |
Pulse transformer | |
7 | CEP1165 |
CET |
N-Channel MOSFET | |
8 | CEP1175 |
CET |
N-Channel MOSFET | |
9 | CEP1185 |
CET |
N-Channel MOSFET | |
10 | CEP1186 |
CET |
N-Channel MOSFET | |
11 | CEP1195 |
CET |
N-Channel MOSFET | |
12 | CEP125 |
Sumida |
Power Inductors |