CEP13N5 - CET

CEP13N5 N-Channel MOSFET

CEP13N5/CEB13N5 CEF13N5 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP13N5 CEB13N5 CEF13N5 VDSS 500V 500V 500V RDS(ON) 0.48Ω 0.48Ω 0.48Ω ID 13A 13A 13A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(.

Features

Type CEP13N5 CEB13N5 CEF13N5 VDSS 500V 500V 500V RDS(ON) 0.48Ω 0.48Ω 0.48Ω ID 13A 13A 13A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C Drain Current-Continuous @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy.