CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-2.
100V, 12.8A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C Drain Current-Continuous @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 100 ±20.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP13N10 |
CET |
N-Channel MOSFET | |
2 | CEP13N07 |
CET |
N-Channel MOSFET | |
3 | CEP13N5 |
CET |
N-Channel MOSFET | |
4 | CEP13N5A |
CET |
N-Channel Enhancement Mode Field Effect Transistor | |
5 | CEP1311C |
Sumida |
ADSL Transformer | |
6 | CEP1311E |
Sumida |
ADSL Transformer | |
7 | CEP1012 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
8 | CEP1012L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
9 | CEP10N4 |
CET |
N-Channel MOSFET | |
10 | CEP10N6 |
CET |
N-Channel MOSFET | |
11 | CEP110P03 |
CET |
P-Channel MOSFET | |
12 | CEP1110 |
Sumida |
Pulse transformer |