CEP09N7G - CET

CEP09N7G N-Channel MOSFET

CEP09N7G/CEB09N7G CEF09N7G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP09N7G CEB09N7G CEF09N7G VDSS 700V 700V 700V RDS(ON) 1Ω 1Ω 1Ω ID 9A 9A 9A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIE.

Features

Type CEP09N7G CEB09N7G CEF09N7G VDSS 700V 700V 700V RDS(ON) 1Ω 1Ω 1Ω ID 9A 9A 9A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e .