CEP09N7A - CET

CEP09N7A N-Channel MOSFET

CEP09N7A/CEB09N7A CEF09N7A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP09N7A CEB09N7A CEF09N7A VDSS 700V 700V 700V RDS(ON) 1.2Ω 1.2Ω 1.2Ω ID 8A 8A 8A e @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G S CEB SERIES TO-263(DD-PAK).

Features

Type CEP09N7A CEB09N7A CEF09N7A VDSS 700V 700V 700V RDS(ON) 1.2Ω 1.2Ω 1.2Ω ID 8A 8A 8A e @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg f TO-220F Units V V 700 ±30 8 30 167 1.33 -55 to 150 8 .