CEP09N6/CEB09N6 CEI09N6/CEF09N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP09N6 CEB09N6 CEI09N6 CEF09N6 VDSS 600V 600V 600V 600V RDS(ON) 1.2Ω 1.2Ω 1.2Ω 1.2Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 .
Type CEP09N6 CEB09N6 CEI09N6 CEF09N6 VDSS 600V 600V 600V 600V RDS(ON) 1.2Ω 1.2Ω 1.2Ω 1.2Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP09N7A |
CET |
N-Channel MOSFET | |
2 | CEP09N7G |
CET |
N-Channel MOSFET | |
3 | CEP01N6 |
CET |
N-Channel MOSFET | |
4 | CEP01N65 |
CET |
N-Channel MOSFET | |
5 | CEP01N6G |
CET |
N-Channel MOSFET | |
6 | CEP02N6 |
Chino-Excel Technology |
N-channel Enhancement Mode Field Effect Transistor | |
7 | CEP02N65A |
CET |
N-Channel Enhancement Mode Field Effect Transistor | |
8 | CEP02N65D |
CET |
N-Channel MOSFET | |
9 | CEP02N65G |
CET |
N-Channel Enhancement Mode Field Effect Transistor | |
10 | CEP02N6A |
CET |
N-Channel MOSFET | |
11 | CEP02N6G |
CET |
N-Channel MOSFET | |
12 | CEP02N7 |
CET |
N-Channel MOSFET |