CEM73A3G - CET

CEM73A3G N-Channel MOSFET

CEM73A3G N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12.5A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 18mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA =.

Features

30V, 12.5A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 18mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 12.5 IDM 50 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Th.