CEM73A3G |
Part Number | CEM73A3G |
Manufacturer | CET |
Description | CEM73A3G N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12.5A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 18mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High po... |
Features |
30V, 12.5A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 18mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
5
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 12.5 IDM 50
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Th... |
Document |
CEM73A3G Data Sheet
PDF 385.04KB |
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