CEM7808 Enhancement Mode Field Effect Transistor (2 X N and 2 X P Channel) PRELIMINARY FEATURES 30V, 6.2A, RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 60mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS com.
30V, 6.2A, RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 60mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. P1S P2S P1G P2G N1D P1D N2D P2D N1G N2G P1G 8 N1S N2S P1S N2D P2S P2D 76 P2G 5 SO-8 1 1234 N1G N1D P1D N1S N2S N2G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage VDS 30 -30 VGS ±20 ±20 Drain Cu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEM7101 |
CET |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
2 | CEM7350 |
CET |
Dual Enhancement Mode Field Effect Transistor | |
3 | CEM7350L |
CET |
Dual Enhancement Mode Field Effect Transistor | |
4 | CEM73A3G |
CET |
N-Channel MOSFET | |
5 | CEM-1203 |
CUI |
magnetic buzzer | |
6 | CEM0215 |
CET |
N-Channel MOSFET | |
7 | CEM0310 |
CET |
Single N-Channel Enhancement Mode Field Effect Transistor | |
8 | CEM0410 |
CET |
Single N-Channel Enhancement Mode Field Effect Transistor | |
9 | CEM0415 |
CET |
N-Channel Enhancement Mode Field Effect Transistor | |
10 | CEM1010 |
Chino-Excel Technology |
Single N-Channel Enhancement Mode Field Effect Transistor | |
11 | CEM11C2 |
CET |
Dual Enhancement Mode Field Effect Transistor | |
12 | CEM11M2 |
CET |
Dual N-Channel Enhancement Mode Field Effect Transistor |