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CEM0415 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 150V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 6V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM R.
150V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 6V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage(Typ) Gate-Source Voltage VDS 150 VGS ±30 Drain Current-Continuous ID 4 Drain Current-Pulsed a IDM 16 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter.
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|---|---|---|---|---|
| 1 | CEM0410 |
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| 2 | CEM0215 |
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| 3 | CEM0310 |
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Single N-Channel Enhancement Mode Field Effect Transistor |
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| 4 | CEM-1203 |
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| 5 | CEM1010 |
Chino-Excel Technology |
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| 6 | CEM11C2 |
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| 7 | CEM11M2 |
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| 8 | CEM1515P |
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| 9 | CEM2005 |
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| 10 | CEM2030 |
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| 11 | CEM2030A |
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| 12 | CEM2082 |
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|