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Ordering number : ENN6664A 2SC5698 NPN Triple Diffused Planar Silicon Transistor 2SC5698 CRT Display Horizontal Deflection Output Applications Features High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process. •t 4 Adoption • On-chip damper diode. • • Package Dimensions unit : mm 2.
High speed. High breakdown voltage(VCBO=1500V).
• High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process.
•t 4 Adoption
• On-chip damper diode.
•
•
Package Dimensions
unit : mm 2174A
[2SC5698]
16.0
5.0
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
3.5
0.8
2.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Ts.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C5690 |
Sanyo Semicon Device |
2SC5690 |
|
| 2 | C5694 |
Sanyo Semicon Device |
2SC5694 |
|
| 3 | C5695 |
Toshiba Semiconductor |
2SC5695 |
|
| 4 | C5696 |
Sanyo |
2SC5696 |
|
| 5 | C5604 |
NEC |
2SC5604 |
|
| 6 | C5609 |
Panasonic Semiconductor |
2SC5609 |
|
| 7 | C5610 |
Sanyo Semicon Device |
2SC5610 |
|
| 8 | C5611 |
Sanyo Semicon Device |
2SC5611 |
|
| 9 | C5612 |
Toshiba Semiconductor |
2SC5612 |
|
| 10 | C5615 |
NEC |
NPN SILICON RF TRANSISTOR |
|
| 11 | C5617 |
NEC |
NPN SILICON RF TRANSISTOR |
|
| 12 | C5622 |
Panasonic Semiconductor |
2SC5622 |
|