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Ordering number : ENN6663C 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2174A [2SC5696] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-ch.
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Package Dimensions
unit : mm 2174A
[2SC5696]
16.0 5.0 3.4 5.6 3.1 8.0 22.0
High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.
21.0 4.0
2.8 2.0 20.4 0.7 1 2 5.45 3.5 3 0.9
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C5690 |
Sanyo Semicon Device |
2SC5690 |
|
| 2 | C5694 |
Sanyo Semicon Device |
2SC5694 |
|
| 3 | C5695 |
Toshiba Semiconductor |
2SC5695 |
|
| 4 | C5698 |
Sanyo Semiconductor Corporation |
2SC5698 |
|
| 5 | C5604 |
NEC |
2SC5604 |
|
| 6 | C5609 |
Panasonic Semiconductor |
2SC5609 |
|
| 7 | C5610 |
Sanyo Semicon Device |
2SC5610 |
|
| 8 | C5611 |
Sanyo Semicon Device |
2SC5611 |
|
| 9 | C5612 |
Toshiba Semiconductor |
2SC5612 |
|
| 10 | C5615 |
NEC |
NPN SILICON RF TRANSISTOR |
|
| 11 | C5617 |
NEC |
NPN SILICON RF TRANSISTOR |
|
| 12 | C5622 |
Panasonic Semiconductor |
2SC5622 |
|