C5622 - Panasonic Semiconductor

C5622 2SC5622

Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) (23.4) 22.0±0.5 26.5±0.5 (2.0) (1.2) (10.0) I Features • High breakdown voltage: 1 500 V • High-speed switching • Wide area of safe operation (ASO) I Absolute Maximum Ratings TC = 25°C Parameter Symb.

Features

• High breakdown voltage: 1 500 V
• High-speed switching
• Wide area of safe operation (ASO) I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector to base voltage VCBO 1 500 V 18.6±0.5 (2.0) Solder Dip 5.45±0.3 10.9±0.5 5.5±0.3 3.3±0.3 (2.0) MaDinistecnoanntincueed ICEPCBCdJSCEFCBTuioetrmmooaoaooEsonaarlssllllslrwiinclkllleeleittaeeeeetspttcagcictcceeccitaoocrtttoorrtetuidtoooonotrlirettrrtlrorroornctmeetioencteupccmcobbnfuimureotrPtaaatortpmeterwoesspearrleqmeenfrieeerructfCtntarairvvsueetactttamtoornrhrut.