C5690 - Sanyo Semicon Device

C5690 2SC5690

Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit : mm 2174.

Features

• High speed.
• High breakdown voltage(VCBO=1500V).
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode. Package Dimensions unit : mm 2174A [2SC5690] 16.0 3.4 5.6 3.1 22.0 8.0 0.8 21.0 5.0 4.0 2.8 2.0 2.1 0.7 0.9 20.4 Specifications Absolute Maximum Ratings at Ta=25°C 12 3 5.45 5.45 3.5 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation Junction Temperat.