C5458 - Toshiba

C5458 2SC5458

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications 2SC5458 Unit: mm • Excellent switching times: tr = 0.5 µs (max) tf = 0.3 µs (max) (IC = 0.4 A) • High collector breakdown voltage: VCEO = 400 V Maximum Ratings (Ta = 25°C).

Features

ctor-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.1 A IC = 0.3 A, IB = 0.04 A IC = 0.3 A, IB = 0.04 A Min Typ. Max Unit ― ― 100 µA ― ― 100 µA 600 ― ― V 400 ― ― V 20 ― ― 30 ― 80 ― ― 1.0 V ― ― 1.3 V Turn-on time Switching time Storage time tr 20 µs IB1 OUTPUT ― ― 0.5 INPUT IB1 600 Ω tstg IB2 IB2 ― ― 2.0 µs VCC ≈ 24.