PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttie Power Transistors 2SC5413 Silicon NPN triple diffusion mesa type 20.0±0.5Product lifecyclennuaen 2.5 Solder Dip For horizontal deflection.
q High breakdown voltage, and high reliability through the use of a glass passivation layer
q High-speed switching q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCES VCEO VEBO ICP IC IB
PC
1700 1700 600
5 30 20 10 200 3.5
Junction temperature Storage temperature
Tj 150 Tstg
–55 to +150
Unit V V V V A A A
W
˚C ˚C
s Electrical Characteristics (TC=.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5411 |
Toshiba Semiconductor |
2SC5411 | |
2 | C5416 |
Sanyo |
2SC5416 | |
3 | C5417 |
Sanken electric |
2SC5417 | |
4 | C5418 |
Panasonic Semiconductor |
2SC5418 | |
5 | C5419 |
Panasonic |
Silicon NPN Transistor | |
6 | C5404 |
Toshiba Semiconductor |
2SC5404 | |
7 | C5406 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
8 | C5406A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
9 | C5407 |
Panasonic |
2SC5407 | |
10 | C5420 |
Sanyo |
2SC5420 | |
11 | C5422 |
Toshiba Semiconductor |
2SC5422 | |
12 | C5423 |
Panasonic |
2SC5423 |