C5457 - Panasonic

C5457 Silicon NPN Transistor

Power Transistors 2SC5457 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 6.5±0.1 5.3±0.1 4.35±0.1 Unit: mm 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 s Features 0.8max 1.0±0.2 1.0±0.1 2.5±0.1 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) 0.93±0.1 0.1±0.05 0.5±0.1 2.3.

Features

0.8max 1.0±0.2 1.0±0.1 2.5±0.1 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) 0.93±0.1 0.1±0.05 0.5±0.1 2.3±0.1 4.6±0.1 0.75±0.1 q Satisfactory linearity of foward current transfer ratio hFE / s Absolute Maximum Ratings (TC=25˚C) 1 2 3 1:Base 2:Collector 3:Emitter U Type Package e ) Parameter Symbol Ratings Unit c type Collector to base voltage VCBO 500 V n d tage. ued VCES 500 5.5±0.2 1.8 V s tin Collector to emitter voltage le on VCEO 400 V a elifecyc disc Emitter to base voltage VEBO 7 V 13.3±0.3 n u t ed, .