2SC5447 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-576 B (Z) 3rd. Edition September 1997 Features • High breakdown voltage VCES = 1500 V • High speed switching tf = 0.15 µsec (typ.) at fH = 64 kHz • Isolated package TO–3PFM Outline TO–3PFM C 2 1 B 3 E 1 2 3 1. Base 2. Collector 3. Emitter Free Datasheet http:/.
• High breakdown voltage VCES = 1500 V
• High speed switching tf = 0.15 µsec (typ.) at fH = 64 kHz
• Isolated package TO
–3PFM
Outline
TO
–3PFM
C 2
1 B
3 E
1
2 3
1. Base 2. Collector 3. Emitter
Free Datasheet http://www.datasheetlist.com/
2SC5447
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VEBO IC ic(peak) PC Tj Tstg
Note1
Ratings 1500 6 8 16 50 150
–55 to +150 8
Unit V V A A W °C °C A
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5440 |
Panasonic Semiconductor |
2SC5440 | |
2 | C5442 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
3 | C5442A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
4 | C5443 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
5 | C5445 |
Werlatone |
30 dB Dual Directional Coupler | |
6 | C5445 |
Toshiba |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
7 | C5446 |
Toshiba Semiconductor |
2SC5446 | |
8 | C5448 |
Hitachi Semiconductor |
2SC5448 | |
9 | C5449 |
Hitachi Semiconductor |
2SC5449 | |
10 | C5404 |
Toshiba Semiconductor |
2SC5404 | |
11 | C5406 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
12 | C5406A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |