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Ordering number:EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5443] 20.0 3.3 5.
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2048B
[2SC5443]
20.0 3.3
5.0
2.0 1.0
20.7 26.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
2.0 3.4
1.2 1 23
5.45 5.45
2.8
0.6
1 : Base 2 : Collector 3 : Emitter SAN.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C5440 |
Panasonic Semiconductor |
2SC5440 |
|
| 2 | C5442 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|
| 3 | C5442A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|
| 4 | C5445 |
Werlatone |
30 dB Dual Directional Coupler |
|
| 5 | C5445 |
Toshiba |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 6 | C5446 |
Toshiba Semiconductor |
2SC5446 |
|
| 7 | C5447 |
Hitachi Semiconductor |
2SC5447 |
|
| 8 | C5448 |
Hitachi Semiconductor |
2SC5448 |
|
| 9 | C5449 |
Hitachi Semiconductor |
2SC5449 |
|
| 10 | C5404 |
Toshiba Semiconductor |
2SC5404 |
|
| 11 | C5406 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|
| 12 | C5406A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|