Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Plhtetap:s//epvaisnita fsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmatiSolo2d0.enr0.±D0i.2p.55DisMcaionnttiennuaendc Power Transistors 2SC5442, 2SC5442A Silicon NPN triple diffusion mesa type For horizontal deflection output s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed .
q High breakdown voltage, and high reliability through the use of a glass passivation layer
q High-speed switching q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCES VCEO VEBO ICP IC IB
PC
1500 1500 600
5 20 15 8 100 3.5
Junction temperature Storage temperature
Tj 150 Tstg
–55 to +150
Unit V V V V A A A
W
˚C ˚C
1.5
10.0 6.0
26.0±0.5e/
20.0±0..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C5442 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|
| 2 | C5440 |
Panasonic Semiconductor |
2SC5440 |
|
| 3 | C5443 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | C5445 |
Werlatone |
30 dB Dual Directional Coupler |
|
| 5 | C5445 |
Toshiba |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 6 | C5446 |
Toshiba Semiconductor |
2SC5446 |
|
| 7 | C5447 |
Hitachi Semiconductor |
2SC5447 |
|
| 8 | C5448 |
Hitachi Semiconductor |
2SC5448 |
|
| 9 | C5449 |
Hitachi Semiconductor |
2SC5449 |
|
| 10 | C5404 |
Toshiba Semiconductor |
2SC5404 |
|
| 11 | C5406 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|
| 12 | C5406A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors |
|