P-N Junction Area (μm) Chip Top Area (μm) Chip Thickness (μm) Chip Bottom Area (μm) Au Bond Pad Diameter (μm) Bonding Area Diameter (μm) Note 5 Au Bond Pad Thickness (μm) Backside Contact Metal Area (μm) CxxxUT170-Sxxxx-31 Dimension Tolerance 140 x 140 ± 25 170 x 170 ± 25 50 ± 10 130 x 130 ± 25 85 -5, +15 70 -5, +15 1.2 ± 0.5 80 x 80 ± 25 .
• Small Chip
– 170 x 170 x 50 μm
• Single Wire Bond Structure
• UT LED Performance
– 450 nm
– 12+ mW
– 460 nm
– 10+ mW
– 470 nm
– 10+ mW
– 527 nm
– 4+ mW
• Low Forward Voltage
– 2.9 V Typical at 5 mA
• 2kV Class 2 ESD Rating
APPLICATIONS
• Indicator Applications
– Consumer Products
– Mobile Devices
– Product Displays
– White Goods
• Automotive Applications
– Interior Indicators
– Meter Cluster Lighting
– Center Stack Displays
CxxxUT170-Sxxxx-31 Chip Diagram
Top View
Anode (+), Ф85 µm (Bonding area, Ф70 µm) Junction, 140 x 140 µm
Thickness 50 µm
Side View
170 x 170 µm
Bottom Surface 130 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C527UT190 |
CREE |
LED | |
2 | C5270 |
Panasonic Semiconductor |
2SC5270 | |
3 | C5271 |
Sanken electric |
2SC5271 | |
4 | C5275 |
Sanyo |
2SC5275 | |
5 | C5277 |
Sanyo |
2SC5277 | |
6 | C5200 |
Toshiba |
Silicon NPN Transistor | |
7 | C5200N |
Toshiba |
NPN Transistor | |
8 | C5201 |
Toshiba |
2SC5201 | |
9 | C5206 |
Hitachi |
Silicon NPN Transistor | |
10 | C5207A |
Hitachi Semiconductor |
Silicon NPN Transistor | |
11 | C520A |
ETC |
2SC520A | |
12 | C5213 |
Isahaya Electronics |
2SC5213 |