Ordering number:EN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz). · High cutoff frequency : fT=11GHz typ. · Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=7GHz type. : S21e2.
· Low noise : NF=0.9dB typ (f=1GHz).
: NF=1.4dB typ (f=1.5GHz).
· High gain : S21e2=10dB typ (f=1.5GHz).
· High cutoff frequency : fT=11GHz typ.
· Low-voltage, low-current operation
(VCE=1V, IC=1mA) : fT=7GHz type. : S21e2=5.5dB typ (f=1.5GHz).
Package Dimensions
unit:mm 2018B
[2SC5275]
0.4 3
0.16
0 to 0.1
0.5 1.5 0.5 2.5
Specifications
1 0.95 0.95 2 1.9 2.9
0.8 1.1
1 : Base 2 : Emitter 3 : Collector SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissip.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5270 |
Panasonic Semiconductor |
2SC5270 | |
2 | C5271 |
Sanken electric |
2SC5271 | |
3 | C5277 |
Sanyo |
2SC5277 | |
4 | C527UT170 |
CREE |
LED | |
5 | C527UT190 |
CREE |
LED | |
6 | C5200 |
Toshiba |
Silicon NPN Transistor | |
7 | C5200N |
Toshiba |
NPN Transistor | |
8 | C5201 |
Toshiba |
2SC5201 | |
9 | C5206 |
Hitachi |
Silicon NPN Transistor | |
10 | C5207A |
Hitachi Semiconductor |
Silicon NPN Transistor | |
11 | C520A |
ETC |
2SC520A | |
12 | C5213 |
Isahaya Electronics |
2SC5213 |