Ordering number:EN2966B NPN Triple Diffused Planar Silicon Transistor 2SC3895 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3895] Specifica.
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC3895]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
.
·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·Ultrahigh-definition CRT disp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3890 |
Sanken electric |
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2 | C3892 |
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3 | C3893 |
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4 | C3894 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
5 | C3896 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
6 | C3897 |
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7 | C380 |
Powerex |
Phase Control SCR | |
8 | C3802K |
Rohm |
NPN Silicon Transistor | |
9 | C3803 |
Toshiba |
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10 | C3805 |
Toshiba |
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11 | C3807 |
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12 | C3808 |
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