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www.DataSheet.co.kr Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers. Package Dimensions unit:mm 2043A [2SC3807] Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current ga.
· Large current capacity (IC=2A).
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
· High VEBO (VEBO≥15V).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
B : Base C : Collector E : Emitter SANYO : TO-126LP
Conditions
Ratings 30 25 15 2 4 1.2 15 150
–55 to +150
Unit V V.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C380 |
Powerex |
Phase Control SCR |
|
| 2 | C3802K |
Rohm |
NPN Silicon Transistor |
|
| 3 | C3803 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | C3805 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | C3808 |
Sanyo |
NPN Epitaxial Planar Silicon Transistor |
|
| 6 | C3811 |
Panasonic |
Silicon NPN Transistor |
|
| 7 | C3820 |
Sanyo |
NPN Epitaxial Planar Type Silicon Transistor |
|
| 8 | C3825 |
Panasonic |
Silicon PNP Transistor |
|
| 9 | C3828 |
ETC |
Silicon NPN Planar Transistor |
|
| 10 | C3829 |
Panasonic |
Silicon NPN Transistor |
|
| 11 | C3831 |
Sanken electric |
Silicon NPN Transistor |
|
| 12 | C3832 |
SavantIC |
Silicon NPN Power Transistors |
|