·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed APPLICATIONS ·Horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter.
ration voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Storage time Resistive load ICP=5A ;IB1=1A;IB2=-2A;RL=40A Fall time CONDITIONS IE=200mA , IC=0 IC=5A ;IB=1.2A IC=5A ;IB=1.2A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=5A 66 8 1 MIN 5 2SC3892 SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB VF ts tf TYP. MAX UNIT V 5.0 1.5 10 200 12 3 210 2.0 2.5 0.2 V V µA mA MHz pF V µs µs 2 Free Datasheet http://www.Datas.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3890 |
Sanken electric |
Silicon NPN Transistor | |
2 | C3893 |
Savantic |
Silicon NPN Power Transistors | |
3 | C3894 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
4 | C3895 |
SavantIC |
Silicon NPN Power Transistors | |
5 | C3895 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
6 | C3896 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
7 | C3897 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
8 | C380 |
Powerex |
Phase Control SCR | |
9 | C3802K |
Rohm |
NPN Silicon Transistor | |
10 | C3803 |
Toshiba |
Silicon NPN Transistor | |
11 | C3805 |
Toshiba |
Silicon NPN Transistor | |
12 | C3807 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |