·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed APPLICATIONS ·Horizontal deflection output for high resolution display PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Co.
llector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Storage time Fall time CONDITIONS IE=200mA , IC=0 IC=6A ;IB=1.5A IC=6A ;IB=1.5A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=6A 66 8 1 MIN 5 www.datasheet4u.com 2SC3893 SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB VF ts tf TYP. MAX UNIT V 5.0 1.5 10 200 12 3 210 2.0 2.5 0.2 V V µA mA MHz pF V µs µs Resistive load ICP=6A ;IB1=1.2A;IB2=-2.4A RL=33.3@ 2 SavantIC Semiconductor Product Specification Silico.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3890 |
Sanken electric |
Silicon NPN Transistor | |
2 | C3892 |
SavantIC |
Silicon NPN Power Transistors | |
3 | C3894 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
4 | C3895 |
SavantIC |
Silicon NPN Power Transistors | |
5 | C3895 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
6 | C3896 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
7 | C3897 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
8 | C380 |
Powerex |
Phase Control SCR | |
9 | C3802K |
Rohm |
NPN Silicon Transistor | |
10 | C3803 |
Toshiba |
Silicon NPN Transistor | |
11 | C3805 |
Toshiba |
Silicon NPN Transistor | |
12 | C3807 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |