C3811 - Panasonic

C3811 Silicon NPN Transistor

Transistors 2SC3811 Silicon NPN epitaxial planar type For high-speed switching ■ Features • Low collector-emitter saturation voltage VCE(sat) 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 40 V 0.45+–00..115 0.45+–00..115 .

Features

• Low collector-emitter saturation voltage VCE(sat) 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 0.7±0.2 12.9±0.5 0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 40 V 0.45+
  –00..115 0.45+
  –00..115 e Collector-emitter voltage (E-B short) VCES 40 V c type) Emitter-base voltage (Collector open) VEBO 5 V n d ge. ed Collector current IC 100 mA 2.3±0.2 le sta ntinu Peak collector current ICP 300 mA a e cyc isco Collector power dissipation PC 400 mW life d, d Junction temperature Tj 150 °C n u duct type Sto.