C3807 Sanyo Semicon Device NPN Epitaxial Planar Silicon Transistor Datasheet, en stock, prix

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C3807

Sanyo Semicon Device
C3807
C3807 C3807
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Part Number C3807
Manufacturer Sanyo Semicon Device
Description www.DataSheet.co.kr Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpo...
Features
· Large current capacity (IC=2A).
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
· High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C B : Base C : Collector E : Emitter SANYO : TO-126LP Conditions Ratings 30 25 15 2 4 1.2 15 150
  –55 to +150 Unit V V...

Document Datasheet C3807 Data Sheet
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