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2SC3831 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3831 600 500 10 10(Pulse20) 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose sElectrical Characteristics Symbol ICBO.
x 6.0g a. Type No. b. Lot No.
I C
– V CE Characteristics (Typical)
10
A .2
1A
V CE (sat),V BE (sat)
– I C Temperature Characteristics (Typical)
(I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (sa t) (V )
I C
– V BE Temperature Characteristics (Typical)
10 (V CE =4V)
=1
800 mA
V B E (sat) 1
–55˚C (Cas
25˚C (C
Collector Current I C (A)
e Temp)
p)
)
)
mp
6
400 mA
ase Tem
Collector Current I C (A)
8
IB
60 0m A
8
6
p) Tem
Te
(Ca
se
4
4
˚C
(Cas 25˚C
e Te
200mA
(C a
125
˚C
100mA
2
12
C 5˚
25
2
˚C
V C E (sat) 0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C3832 |
SavantIC |
Silicon NPN Power Transistors |
|
| 2 | C3833 |
Sanken |
Silicon NPN Triple Diffused Planar Transistor |
|
| 3 | C3834 |
Sanken electric |
Silicon NPN Transistor |
|
| 4 | C3835 |
Allegro Micro Systems |
Silicon NPN Triple Diffused Planar Transistor |
|
| 5 | C380 |
Powerex |
Phase Control SCR |
|
| 6 | C3802K |
Rohm |
NPN Silicon Transistor |
|
| 7 | C3803 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | C3805 |
Toshiba |
Silicon NPN Transistor |
|
| 9 | C3807 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 10 | C3808 |
Sanyo |
NPN Epitaxial Planar Silicon Transistor |
|
| 11 | C3811 |
Panasonic |
Silicon NPN Transistor |
|
| 12 | C3820 |
Sanyo |
NPN Epitaxial Planar Type Silicon Transistor |
|