·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·Switching regulator and general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Product Specification 2SC3678 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO VCEO Collector-base .
ge IC=10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A ICBO Collector cut-off current VCB=800V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain IC=1A ; VCE=4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IE=-0.3A ; VCE=12V Switching times ton Turn-on time ts Storage time tf Fall time IC=1A; IB1=0.15A;IB2=-0.5A RL=250B,VCC=250V MIN TYP. MAX UNIT 800 V 0.5 V 1.2 V 100 µA 100 µA 10 30 50 pF 6 MHz 1.0 µs 5.0 µs 1.0 µs 2 SavantIC Semiconductor Silicon NPN Power T.
2SC3678 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regul.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3670 |
Toshiba |
2SC3670 | |
2 | C3671 |
Toshiba |
2SC3671 | |
3 | C3672 |
Toshiba |
2SC3672 | |
4 | C3673 |
Toshiba |
2SC3673 | |
5 | C3675 |
Sanyo Semicon Device |
2SC3675 | |
6 | C3676 |
Sanyo |
2SC3676 | |
7 | C3679 |
Sanken electric |
Silicon NPN Triple Diffused Planar Transistor | |
8 | C3600 |
Sanyo |
2SC3600 | |
9 | C3605 |
Toshiba Semiconductor |
2SC3605 | |
10 | C3606 |
Toshiba |
2SC3606 | |
11 | C3607 |
Toshiba |
2SC3607 | |
12 | C3611 |
Panasonic Semiconductor |
2SC3611 |